ME95P03 - P-Channel MOSFET

Matsuki

General Description

The ME95P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦5.6mΩ@VGS=-20V.
RDS(ON)≦6mΩ@VGS=-10V.
RDS(ON)≦8mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME95P03 p-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME95P03
Manufacturer	Matsuki
File Size	1.20 MB
Description	P-Channel MOSFET
Datasheet	ME95P03 Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME95P03-G	P-Channel MOSFET
ME95N03	N-Channel MOSFET
ME95N03-G	N-Channel MOSFET
ME95N03T	N-Channel MOSFET
ME95N03T-G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

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P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME95P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252-3L) Top View ME95P03/ME95P03-G FEATURES ● RDS(ON)≦5.6mΩ@VGS=-20V ● RDS(ON)≦6mΩ@VGS=-10V ● RDS(ON)≦8mΩ@VGS=-4.