.
Matsuki
ME08N20-G - N-Channel MOSFET
ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis.
Matsuki
ME2301DC-G - P-Channel 20V (D-S) MOSFET
ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION The ME2301DC is the P-Channel logic enhancement mode power field eff.
Matsuki
ME7362 - N-Channel MOSFET
N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is the N-Channel logic enhancement mode power field effect transistors are produced using hig.
Matsuki
ME60N03 - 30V N-Channel Enhancement Mode MOSFET
ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.5V,Ids@20A =13mΩ FEATURES Advanced trench proce.
Matsuki
ME50N08-G - N-Channel MOSFET
N- Channel 80V (D-S) MOSFET GENERAL DESCRIPTION The ME50N08 is the N-Channel logic enhancement mode power field effect transistors are produced using .
Matsuki
ME8117 - P-Channel MOSFET
P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using hi.
Matsuki
ME9435A - 30V P-Channel Enhancement Mode MOSFET
ME9435A 30V P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME9435A is the P-Channel logic enhancement mode power field effect transistors, .
Matsuki
ME15N10-G - N-Channel 100-V (D-S) MOSFET
N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo.
Matsuki
ME04N25-G - N-Channel MOSFET
N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G GENERAL DESCRIPTION The ME04N25 is the N-Channel logic enhancement mode power field effect transistor.
Matsuki
ME4894-G - N-Channel 30-V(D-S) MOSFET
N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi.
Matsuki
ME95N03 - N-Channel MOSFET
N- Channel 30V (D-S) MOSFET ME95N03/ME95N03-G GENERAL DESCRIPTION The ME95N03 is the N-Channel logic enhancement mode power field effect transistors.
Matsuki
ME7636-G - N-Channel MOSFET
N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7636 is the N-Channel logic enhancement mode power field effect transistors are produc.
Matsuki
ME1117 - 1A Low Dropout Voltage Regulator
1A Low Dropout Voltage Regulator GENERAL DESCRIPTION The ME1117 series of adjustable and fixed voltage regulators are designed to provide 1A output cu.
Matsuki
ME8117A - P-Channel MOSFET
P-Channel Enhancement Mode MOSFET ME8117A /ME8117A-G GENERAL DESCRIPTION The ME8117A-G is the P-Channel logic enhancement mode power field effect tr.
Matsuki
ME4894 - N-Channel 30-V(D-S) MOSFET
N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi.
Matsuki
ME7114-G - N-Channel MOSFET
N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7114-G is the N-Channel logic enhancement mode power field effect transistors are prod.
Matsuki
ME8117A-G - P-Channel MOSFET
P-Channel Enhancement Mode MOSFET ME8117A /ME8117A-G GENERAL DESCRIPTION The ME8117A-G is the P-Channel logic enhancement mode power field effect tr.
Matsuki
ME8117-G - P-Channel MOSFET
P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using hi.
Matsuki
ME40P03T-G - P-Channel MOSFET
P-Channel 30V (D-S) MOSFET ME40P03T/ME40P03T-G GENERAL DESCRIPTION The ME40P03T is the P-Channel logic enhancement mode power field effect transisto.
