ME2N7002DKW-G
Overview
The ME2N7002DKW-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
- RDS(ON)≦3Ω@VGS=10V
- RDS(ON)≦4Ω@VGS=4.5V
- RDS(ON)≦4.5Ω@VGS=3V
- ESD Protection HBM >2KV
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
