ME2N7002D
Overview
The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
- Simple Drive Requirement
- Small Package Outline
- ROHS Compliant
- ESD Rating = 2000V HBM Mechanical data
- High density cell design for low RDS(ON)
- Voltage controlled small signal switching.
- Rugged and reliable.
- High saturation current capability.
- High-speed switching.
- Not thermal runaway.
