Datasheet Summary
N-Channel MOSFET
- ESD Protected
GENERAL DESCRIPTION
The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
Features
- Simple Drive Requirement
- Small Package Outline
- ROHS pliant
- ESD Rating =...
