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ME2N7002D2KW-G - Dual N-Channel MOSFET

Product Overview

Matsuki

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ME2N7002D2KW-G Dual N-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME2N7002D2KW-G

Datasheet Details

Part number	ME2N7002D2KW-G
Manufacturer	Matsuki
File Size	1.02 MB
Description	Dual N-Channel MOSFET
Datasheet	ME2N7002D2KW-G Datasheet
Additional preview pages of the ME2N7002D2KW-G datasheet.

Product details

Description

The ME2N7002D2KW-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦3Ω@VGS=10V.
RDS(ON)≦4Ω@VGS=4.5V.
RDS(ON)≦4.5Ω@VGS=3V.
ESD Protection HBM >2KV.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |