Datasheet Summary
- Channel 60V (D-S) MOSFET
ME2N7002D2/ME2N7002D2-G
GENERAL DESCRIPTION
The ME2N7002D2 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(SOT-23) Top View
Features
- RDS(ON)≦4.5Ω@VGS=10V
- RDS(ON)≦5.5Ω@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
Ordering Information: ME2N7002D2 (Pb-free) ME2N7002D2-G (Green product-Halogen...