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ME2N7002DA-G - N-Channel MOSFET

Download the ME2N7002DA-G datasheet PDF. This datasheet also covers the ME2N7002DA variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON) ≦4Ω@VGS=10V.
  • RDS(ON) ≦4Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME2N7002DA-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME2N7002DA-G
Manufacturer Matsuki
File Size 873.84 KB
Description N-Channel MOSFET
Datasheet download datasheet ME2N7002DA-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME2N7002DA/ME2N7002DA-G N - Channel 60V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON) ≦4Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.