ME2N7002DA-G
DESCRIPTION
The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
- RDS(ON) ≦4Ω@VGS=10V
- RDS(ON) ≦4Ω@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- Th Ordering Information: ME2N7002DA (Pb-free)
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