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Dual N-Channel MOSFET DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
ME2N7002D1KW-G(Green)
• Low On-Resistance • Fast Switching Speed • Low-voltage drive • Easily designed drive circuits • ESD Protected: 1000V
Maximum Ratings and electrical characteristic Ratings at 25°C ambient temperature unless otherwise specified
Symbol VDSS VGSS
ID
IDR
PD Tch TJ , TSTG
PARAMETER Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous
Drain Current - Pulsed*1
Reverse drain Current - Continuous
Reverse drain Current - Pulsed*1 Total Power Dissipation*2
Channel temperature Operating and Storage Temperature Range
Typical 60 ±20 115 800 115 800 225 150
-55 to +150
Units V V
mA
mA
mW °C °C
Jan, 2011-Ver1.
ME2N7002D1KW-G Datasheet
