ME2N7002DW Description
The ME2N7002DW is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching ,...
ME2N7002DW Key Features
- ESD Rating 2KV HBM
- 3-pin SOT-323 package
- Pb-free plating ; RoHS pliant (green Product)
- High density cell design for low RDS(ON)
- Very low leakage current in off condition
- Advanced trench process technology
- High-speed switching
- The soldering temperature and time shall