ME2N7002DW
DESCRIPTION
The ME2N7002DW is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
- ESD Rating 2KV HBM
- 3-pin SOT-323 package
- Pb-free plating ; Ro HS pliant (green Product)
Mechanical data
- High density cell design for low RDS(ON)
- Very low leakage current in off condition
- Advanced trench process technology
- High-speed switching.
- The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
PIN CONFIGURATION
(SOT-323) Top...
