Datasheet Details
| Part number | ME2N7002DW |
|---|---|
| Manufacturer | Matsuki |
| File Size | 917.60 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 ME2N7002DW Datasheet
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General Description
The ME2N7002DW is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Key Features
- ESD Rating 2KV HBM.
- 3-pin SOT-323 package.
- Pb-free plating ; RoHS compliant (green Product) Mechanical data.
- High density cell design for low RDS(ON).
- Very low leakage current in off condition.
- Advanced trench process technology.
- High-speed switching.
- The soldering temperature and time shall not exceed 260°C for more than 10 seconds. PIN.