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ME7362 - N-Channel MOSFET

General Description

The ME7362 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦2.0mΩ@VGS=10V.
  • RDS(ON)≦3 mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME7362
Manufacturer Matsuki
File Size 1.11 MB
Description N-Channel MOSFET
Datasheet download datasheet ME7362 Datasheet

Full PDF Text Transcription for ME7362 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ME7362. For precise diagrams, and layout, please refer to the original PDF.

N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMO...

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er field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 Top View ME7362/ME7362-G FEATURES ● RDS(ON)≦2.0mΩ@VGS=10V ● RDS(ON)≦3 mΩ@VGS=4.

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