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ME7386 - N-Channel MOSFET

Description

The ME7386 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦6.5mΩ@VGS=10V.
  • RDS(ON)≦11mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME7386

Datasheet Details

Part number ME7386
Manufacturer Matsuki
File Size 1.27 MB
Description N-Channel MOSFET
Datasheet download datasheet ME7386 Datasheet
Additional preview pages of the ME7386 datasheet.

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Full PDF Text Transcription

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N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7386 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 ME7386/ME7386-G FEATURES ● RDS(ON)≦6.5mΩ@VGS=10V ● RDS(ON)≦11mΩ@VGS=4.
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