ME7386-G Datasheet | Matsuki

DESCRIPTION The ME7386 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook puter power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION Power DFN 5x6 ME7386/ME7386-G FEATURES - RDS(ON)≦6.5mΩ@VGS=10V - RDS(ON)≦11mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch e Ordering Information: ME7386 (Pb-free) ME7386-G (Green product-Halogen...