Download the ME7386-G datasheet PDF.
This datasheet also covers the ME7386 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The ME7386 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Key Features
RDS(ON)≦6.5mΩ@VGS=10V.
RDS(ON)≦11mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Full PDF Text Transcription for ME7386-G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
ME7386-G. For precise diagrams, and layout, please refer to the original PDF.
N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7386 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell d...
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ent mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 ME7386/ME7386-G FEATURES ● RDS(ON)≦6.5mΩ@VGS=10V ● RDS(ON)≦11mΩ@VGS=4.
ME7386-G Datasheet
