ME7356-G Datasheet | Matsuki

DESCRIPTION The ME7356-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION Power DFN 5x6 FEATURES - RDS(ON)≦5mΩ@VGS=10V - RDS(ON)≦6.2mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch Ordering Information: ME7356-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise...