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ME60N03 - 30V N-Channel Enhancement Mode MOSFET

Key Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN.

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Datasheet Details

Part number ME60N03
Manufacturer Matsuki
File Size 672.97 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME60N03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.