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ME60N03-G Datasheet 30v N-channel Enhancement Mode MOSFET

Manufacturer: Matsuki

Overview: ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL.

Datasheet Details

Part number ME60N03-G
Manufacturer Matsuki
File Size 944.65 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet ME60N03-G-Matsuki.pdf

General Description

The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.

Key Features

  • RDS(ON)≦8.5mΩ@VGS=10V.
  • RDS(ON)≦13mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

ME60N03-G Distributor

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