ME60N03-G Description
The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, puter power management and DC to DC converter circuits which need low in-line power loss.
ME60N03-G Key Features
- RDS(ON)≦8.5mΩ@VGS=10V
- RDS(ON)≦13mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current