ME60N03-G Datasheet | Matsuki

ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, puter power management and DC to DC converter circuits which need low in-line power loss. Features - RDS(ON)≦8.5mΩ@VGS=10V - RDS(ON)≦13mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management -...