Datasheet Summary
ME60N03S/ME60N03S-G
30V N-Channel Enhancement Mode MOSFET
VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), Vgs@4.5V,Ids@15A ≦18.5mΩ
Features
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application.
PIN CONFIGURATION (TO-252)
Top View
APPLICATIONS
- Motherboard (V-Core)
- Portable Equipment
- DC/DC Converter
- Load Switch
- LCD Display inverter
- IPC e Ordering Information: ME60N03S (Pb-free)
ME60N03S-G (Green product-Halogen...