ME60N03S-G - N-Channel MOSFET

Matsuki

Download the ME60N03S-G datasheet PDF. This datasheet also covers the ME60N03S variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM.

📥 Download Datasheet

ME60N03S-G n-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME60N03S-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME60N03S-G
Manufacturer	Matsuki
File Size	1.37 MB
Description	N-Channel MOSFET
Datasheet	ME60N03S-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME60N03S	N-Channel MOSFET
ME60N03	30V N-Channel Enhancement Mode MOSFET
ME60N03-G	30V N-Channel Enhancement Mode MOSFET
ME60N03A	25V N-Channel Enhancement Mode MOSFET
ME60N03AS	25V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), Vgs@4.5V,Ids@15A ≦18.5mΩ FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application.