Datasheet Summary
25V N-Channel Enhancement Mode MOSFET
VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m
Features
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current
CONFIGURATION
(TO-252) Top...