Datasheet4U Logo Datasheet4U.com

ME60N03A - 25V N-Channel Enhancement Mode MOSFET

Key Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN.

📥 Download Datasheet

Datasheet Details

Part number ME60N03A
Manufacturer Matsuki
File Size 669.03 KB
Description 25V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME60N03A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME600815 Three-Phase Diode Bridge Modules (150 Amperes/800 Volts) Powerex Powers
ME601215 Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) Powerex Powers
ME601615 Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) Powerex Powers
ME6118 1A Adjustable Voltage High Speed LDO Regulators ChipSourceTek
ME6118 800mA Adjustable Voltage High Speed LDO Regulators Microne

Other Datasheets by Matsuki

Part Number Description
ME60N03AS 25V N-Channel Enhancement Mode MOSFET
ME60N03 30V N-Channel Enhancement Mode MOSFET
ME60N03-G 30V N-Channel Enhancement Mode MOSFET
ME60N03S N-Channel MOSFET
ME60N03S-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m ME60N03A FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Unless Otherwise Noted) Symbol VDSS VGSS ID IDM Limit 25 ±20 50 100 50 23 -55 to 150 110 15 Steady State 20 40 Unit V V A A W TA=25 TA=70 PD TJ, Tstg ) EAS RθJA RθJC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.