Download the ME04N25-G datasheet PDF.
This datasheet also covers the ME04N25 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state resistance.
Key Features
RDS(ON)≦1.8Ω@VGS=10V.
RDS(ON)≦2.0Ω@VGS=5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Full PDF Text Transcription for ME04N25-G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
ME04N25-G. For precise diagrams, and layout, please refer to the original PDF.
N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G GENERAL DESCRIPTION The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell den...
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c enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦1.8Ω@VGS=10V ● RDS(ON)≦2.
ME04N25-G Datasheet
