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ME06N10-G - N-Channel MOSFET

This page provides the datasheet information for the ME06N10-G, a member of the ME06N10 N-Channel MOSFET family.

Description

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦200mΩ@VGS=10V.
  • RDS(ON)≦260mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME06N10-G

Datasheet Details

Part number ME06N10-G
Manufacturer Matsuki
File Size 858.89 KB
Description N-Channel MOSFET
Datasheet download datasheet ME06N10-G Datasheet
Additional preview pages of the ME06N10-G datasheet.

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Full PDF Text Transcription

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N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦200mΩ@VGS=10V ● RDS(ON)≦260mΩ@VGS=4.
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