Datasheet Details
| Part number | ME06N10-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 858.89 KB |
| Description | N-Channel MOSFET |
| Datasheet | ME06N10-G ME06N10 Datasheet (PDF) |
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Overview: N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | ME06N10-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 858.89 KB |
| Description | N-Channel MOSFET |
| Datasheet | ME06N10-G ME06N10 Datasheet (PDF) |
|
|
|
The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ME06N10 | N-Channel MOSFET |
| ME04N25 | N-Channel MOSFET |
| ME04N25-G | N-Channel MOSFET |
| ME07N25 | N-Channel MOSFET |
| ME07N25-G | N-Channel MOSFET |
| ME08N20 | N-Channel MOSFET |
| ME08N20-G | N-Channel MOSFET |