ME07N25 - N-Channel MOSFET

Matsuki

General Description

The ME07N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦590mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).

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ME07N25 n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME07N25
Manufacturer	Matsuki
File Size	1.00 MB
Description	N-Channel MOSFET
Datasheet	ME07N25 Datasheet

Full PDF Text Transcription for ME07N25 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ME07N25. For precise diagrams, and layout, please refer to the original PDF.

N- Channel 250V (D-S) MOSFET ME07N25/ME07N25-G GENERAL DESCRIPTION The ME07N25 is the N-Channel logic enhancement mode power field effect transistors are produced using h...

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c enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

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