ME07N25-G Description
The ME07N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
ME07N25-G Key Features
- RDS(ON)≦590mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)