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ME07N25-G - N-Channel MOSFET

This page provides the datasheet information for the ME07N25-G, a member of the ME07N25 N-Channel MOSFET family.

Description

The ME07N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦590mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).

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Datasheet preview – ME07N25-G

Datasheet Details

Part number ME07N25-G
Manufacturer Matsuki
File Size 1.00 MB
Description N-Channel MOSFET
Datasheet download datasheet ME07N25-G Datasheet
Additional preview pages of the ME07N25-G datasheet.

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Full PDF Text Transcription

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N- Channel 250V (D-S) MOSFET ME07N25/ME07N25-G GENERAL DESCRIPTION The ME07N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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