ME07N25-G Datasheet | Matsuki

DESCRIPTION The ME07N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES - RDS(ON)≦590mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) APPLICATIONS - Power Management - DC/DC Converter - LCD TV & Monitor Display inverter - CCFL inverter - Secondary Synchronous Rectification PIN CONFIGURATION (TO-252-3L) Top View - The Ordering Information: ME07N25 (Pb-free) ME07N25-G (Green product-Halogen free) Absolute Maximu(Gmre Renaptriondgucst) (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction Temperature Thermal Resistance-Junction to Case- Symbol VDS...