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ME06N10 - N-Channel MOSFET

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Matsuki

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ME06N10 N-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME06N10

Datasheet Details

Part number	ME06N10
Manufacturer	Matsuki
File Size	858.89 KB
Description	N-Channel MOSFET
Datasheet	ME06N10 Datasheet
Additional preview pages of the ME06N10 datasheet.

Product details

Description

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦200mΩ@VGS=10V.
RDS(ON)≦260mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 9, 2015 |