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ME06N10 - N-Channel MOSFET

General Description

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦200mΩ@VGS=10V.
  • RDS(ON)≦260mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME06N10
Manufacturer Matsuki
File Size 858.89 KB
Description N-Channel MOSFET
Datasheet download datasheet ME06N10 Datasheet

Full PDF Text Transcription for ME06N10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ME06N10. For precise diagrams, and layout, please refer to the original PDF.

N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using h...

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c enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦200mΩ@VGS=10V ● RDS(ON)≦260mΩ@VGS=4.

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