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ME10N15-G Datasheet N-channel MOSFET

Manufacturer: Matsuki

Overview: N-Channel 150-V (D-S) MOSFET ME10N15/ME10N15-G GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME10N15 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦345mΩ@VGS=10V.
  • RDS(ON)≦365mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

ME10N15-G Distributor