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ME10N15-G - N-Channel MOSFET

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Matsuki

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ME10N15-G N-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME10N15-G

Datasheet Details

Part number	ME10N15-G
Manufacturer	Matsuki
File Size	940.32 KB
Description	N-Channel MOSFET
Datasheet	ME10N15-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME10N15-G, ME10N15. Please refer to the document for exact specifications by model.
Additional preview pages of the ME10N15-G datasheet.

Product details

Description

The ME10N15 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

RDS(ON)≦345mΩ@VGS=10V.
RDS(ON)≦365mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 21, 2018 |