Datasheet Summary
ME100N03T /ME100N03T-G
N- Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME100N03T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Features
- RDS(ON)≦3mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
PIN CONFIGURATION
(TO-220) Top View
- The Ordering Information: ME100N03T /ME100N03T-G (Green product-Halogen free )
Absolute Maximum...