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ME100N03T-G

Manufacturer: Matsuki

ME100N03T-G datasheet by Matsuki.

This datasheet includes multiple variants, all published together in a single manufacturer document.

ME100N03T-G datasheet preview

ME100N03T-G Datasheet Details

Part number ME100N03T-G
Datasheet ME100N03T-G ME100N03T Datasheet (PDF)
File Size 0.96 MB
Manufacturer Matsuki
Description N-Channel MOSFET
ME100N03T-G page 2 ME100N03T-G page 3

ME100N03T-G Overview

The ME100N03T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

ME100N03T-G Key Features

  • RDS(ON)≦3mΩ@VGS=10V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current

ME100N03T-G Applications

  • Power Management in Note book
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ME100N03T-G Distributor

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