Datasheet Summary
N-Channel 150-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME100N15T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TO-220) Top View
Features
- RDS(ON)≦13.6mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
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