Datasheet Summary
ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
Features
- RDS(ON)≦7.2mΩ@VGS=-10V
- RDS(ON)≦12mΩ@VGS=-4.5V
- Super high...
