Datasheet Details
| Part number | ME8107 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 866.48 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet | ME8107-Matsuki.pdf |
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Overview: ME8107/ME8107-G P-Channel Enhancement Mode MOSFET, ESD Protected.
| Part number | ME8107 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 866.48 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet | ME8107-Matsuki.pdf |
|
|
|
The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
ME8107 | Current Mode PWM Controller | Microne |
| Part Number | Description |
|---|---|
| ME8107-G | P-Channel Enhancement Mode MOSFET |
| ME8117 | P-Channel MOSFET |
| ME8117-G | P-Channel MOSFET |
| ME8117A | P-Channel MOSFET |
| ME8117A-G | P-Channel MOSFET |
| ME80N08 | N-Channel 80-V (D-S) MOSFET |
| ME80N08-G | N-Channel 80-V (D-S) MOSFET |
| ME80N08A | N-Channel MOSFET |
| ME80N08A-G | N-Channel MOSFET |
| ME80N08AF | N-Channel MOSFET |