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ME8107-G - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the ME8107-G, a member of the ME8107 P-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦7.2mΩ@VGS=-10V.
  • RDS(ON)≦12mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME8107-G

Datasheet Details

Part number ME8107-G
Manufacturer Matsuki
File Size 866.48 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME8107-G Datasheet
Additional preview pages of the ME8107-G datasheet.

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Full PDF Text Transcription

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ME8107/ME8107-G P-Channel Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦7.2mΩ@VGS=-10V ● RDS(ON)≦12mΩ@VGS=-4.
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