ME08N20-G Overview
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist ance. These dev ices are p articularly su ited for lo w volt age appl ication su ch as LCD i nverter, pute r po wer management and DC to DC converter circu its which need low in-line power...
ME08N20-G Key Features
- RDS(ON)≦0.4Ω@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability