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ME08N20 - N-Channel MOSFET

General Description

The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology.

This high density process is especi ally tailored to minimize on-state resist ance.

Key Features

  • RDS(ON)≦0.4Ω@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME08N20
Manufacturer Matsuki
File Size 622.82 KB
Description N-Channel MOSFET
Datasheet download datasheet ME08N20 Datasheet

Full PDF Text Transcription for ME08N20 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ME08N20. For precise diagrams, and layout, please refer to the original PDF.

ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced ...

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gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist ance. These dev ices are p articularly su ited for lo w volt age appl ication su ch as LCD i nverter, compute r po wer management and DC to DC converter circu its which need low in-line power loss. FEATURES ● RDS(ON)≦0.

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