MEBSS123-G, MEBSS123 N-Channel MOSFET

Matsuki

Description

N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL .
The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

📥 Download Datasheet

MEBSS123-G Datasheet Preview — This datasheet PDF includes multiple part numbers: MEBSS123-G, MEBSS123. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MEBSS123-G, MEBSS123
Manufacturer: Matsuki
File Size: 726.96 KB
Datasheet: MEBSS123-Matsuki.pdf
Description: N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: MEBSS123-G, MEBSS123.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦6Ω@VGS=10V
* RDS(ON)≦10Ω@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
* Th Ordering Information: MEBSS123 (Pb-free)
* MEBSS123-G (Green product-Halogen free)

MEBSS123-G Distributors

📁 Related Datasheet

MEB MEB00806

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MEBSS123 N-Channel MOSFET Matsuki

Matsuki MEBSS123-G-like datasheet