MESS138W-G Datasheet, Matsuki

* RDS(ON)≦3Ω@VGS=10V
* RDS(ON)≦3.5Ω@VGS=5V
* RDS(ON)≦7Ω@VGS=2.75V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistan.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATIO.

The MESS138W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES
* RDS(ON.