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MaxPower Semiconductor

MXP4004DT Datasheet Preview

MXP4004DT Datasheet

40V N-Channel MOSFET

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40V N-Channel MOSFET
MXP4004DT Datasheet
Applications:
z Power Supply
z DC-DC Converters
Features:
z LeadFree
z Low RDS(ON) to Minimize Conductive Loss
z Low Gate Change for Fast Switching Application
z Optimized BVDSS Capability
Ordering Information
Part Number
Package
MXP4004DT
TO220
Brand
MXP
VDSS
40 V
RDS(ON) (Max)
4.0 m
IDa
164 A
Absolute Maximum Ratings
Tc=25unless otherwise specified
Symbol
Parameter
Value
Units
VDS Drain-to-Source Voltage
IDa
Continuous Drain Current
(TC=25)
IDM Pulsed Drain Current @VG=10V
40 V
164
A
655
EAS Single Pulse Avalanche Energy (L=1mH)
630 mJ
IAS Pulsed Avalanche Energy
Figure.9
A
TJ and TSTG Operating Junction and Storage Temperature Range
-55 to 175
a. Calculated continuous current based upon maximum allowable junction temperature, +175. Package limitation current is 80A.
OFF Characteristics
TJ=25unless otherwise specified
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown
Voltage
IDSS
Drain-to-Source Leakage
Current
Gate-to-Source Forward
IGSS
Leakage
Gate-to-Source Reverse
Leakage
©MaxPower Semiconductor Inc.
Min Typ Max Units
Test Conditions
40 V VGS=0V, ID=250µA
1 µA VDS=32V, VGS=0V
100 VDS=32V, VGS=0V TJ=125
100 VGS=+20V
nA
100 VGS= -20V
1 MXP4004DT Rev 1.0, Sep 2011




MaxPower Semiconductor

MXP4004DT Datasheet Preview

MXP4004DT Datasheet

40V N-Channel MOSFET

No Preview Available !

ON Characteristics
TJ=25unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
RDS(ON)
Static Drain-to-Source
On-Resistance
2.8 4 mVGS= 10V, ID=24A
VGS(TH)
Gate Threshold Voltage 2
4 V VDS=VGS, ID=250µA
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Parameter
Min
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”)
Charge
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Typ
4037
672
249
59
21
18
16
61
46
27
Max Units
Test Conditions
pF VGS=0V, VDS=20V, f=1.0MHz
nC VDD=20V, ID=82A, VG=10V
ns VDD=20V, ID=82A, VG=10V,
RG=4.7
Source-Drain Diode Characteristics
Tc=25unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
VSD Diode Forward Voltage
1.2 V
IS=24A, VGS=0V
Trr
Reverse Recovery Time
49 74 ns
Qrr
Reverse Recovery
Charge
IS=38A, di/dt = 100A/μs
32 48 nC
Published by
MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
2
All Rights Reserved.
MXP4004DT Rev 1.0, Sep 2011


Part Number MXP4004DT
Description 40V N-Channel MOSFET
Maker MaxPower Semiconductor
Total Page 5 Pages
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