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DS1245W - 3.3V 1024k Nonvolatile SRAM

Description

A0 - A16 - Address Inputs DQ0 - DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+3.3V) - Ground NC - No Connect 1 of 10 DS1245W DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized a

Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory.
  • Unlimited write cycles.
  • Low-power CMOS.
  • Read and write access times of 100ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Optional industrial temperature range of -40°C to +85°C, designated IND.
  • JEDEC sta.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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19-5640; Rev 11/10 www.maxim-ic.com DS1245W 3.
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