Description
A0 - A16
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC GND
- Power (+3.3V) - Ground
NC - No Connect
1 of 10
DS1245W
DESCRIPTION
The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized a
Features
10 years minimum data retention in the
absence of external power.
Data is automatically protected during power
loss.
Replaces 128k x 8 volatile static RAM,
EEPROM or Flash memory.
Unlimited write cycles.
Low-power CMOS.
Read and write access times of 100ns.
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time.
Optional industrial temperature range of
-40°C to +85°C, designated IND.
JEDEC sta.
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Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
19-5640; Rev 11/10
www.maxim-ic.com
DS1245W
3.
Published:
Mar 27, 2020
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