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DS1245Y - 1024k Nonvolatile SRAM

Description

A0 - A16 - Address Inputs DQ0 - DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+5V) - Ground NC - No Connect 1 of 10 DS1245Y/AB DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131

Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory.
  • Unlimited write cycles.
  • Low-power CMOS.
  • Read and write access times of 70 ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Full ±10% VCC operating range (DS1245Y).
  • Optional ±5% VCC operating range (DS1245A.

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📁 Similar Datasheet

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Other Datasheets by Maxim Integrated (Analog Devices)

Part Number Description
DS1245AB 1024k Nonvolatile SRAM
DS1245W 3.3V 1024k Nonvolatile SRAM
DS1243Y 64K NV SRAM
DS1244 256K NV SRAM
DS1244P 256K NV SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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19-5638; Rev 11/10 www.maxim-ic.
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