Download the DS1270AB datasheet PDF.
This datasheet also covers the DS1270Y variant, as both devices belong to the same 16m nonvolatile sram family and are provided as variant models within a single manufacturer datasheet.
Description
A0
A20
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC GND
- Power (+5V) - Ground
NC - No Connect
DESCRIPTION
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words
Features
- 5 years minimum data retention in the
absence of external power.
- Data is automatically protected during power
loss.
- Unlimited write cycles.
- Low-power CMOS operation.
- Read and write access times of 70 ns.
- Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time.
- Full ±10% VCC operating range (DS1270Y).
- Optional ±5% VCC operating range
(DS1270AB).
- Optional industrial temperature range of
-40°C to.
DS1270AB Datasheet
