Description
A0
A20
- Address Inputs
DQ0
DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC GND
- Power (+3.3V) - Ground
NC - No Connect
DESCRIPTION
The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 w
Features
- Five years minimum data retention in the
absence of external power.
- Data is automatically protected during power
loss.
- Unlimited write cycles.
- Low-power CMOS operation.
- Read and write access times of 100ns.
- Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time.
- Optional industrial (IND) temperature range
of -40°C to +85°C
PIN.
DS1270W Datasheet
