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DS1270W Datasheet 3.3v 16mb Nonvolatile Sram

Manufacturer: Maxim Integrated (now Analog Devices)

Overview: 19-5614; Rev 11/10 www.maxim-ic.com DS1270W 3.3V 16Mb Nonvolatile.

General Description

A0–A20 - Address Inputs DQ0–DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+3.3V) - Ground NC - No Connect DESCRIPTION The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits.

Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition.

When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

Key Features

  • Five years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Unlimited write cycles.
  • Low-power CMOS operation.
  • Read and write access times of 100ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Optional industrial (IND) temperature range of -40°C to +85°C PIN.

More Datasheets from Maxim Integrated (now Analog Devices)

Part Number Description
DS1270AB 16M Nonvolatile SRAM
DS1270Y 16M Nonvolatile SRAM
DS1210 Nonvolatile Controller
DS1217M Nonvolatile Read/Write Cartridge
DS1218 Nonvolatile Controller
DS1220AB 16k Nonvolatile SRAM
DS1220AD 16k Nonvolatile SRAM
DS1220Y 16k Nonvolatile SRAM
DS1225AB 64k Nonvolatile SRAM
DS1225AD 64k Nonvolatile SRAM

DS1270W Distributor