DS1270W Overview
Description
The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition.
Key Features
- Five years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Unlimited write cycles
- Low-power CMOS operation
- Read and write access times of 100ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Address Inputs DQ0–DQ7
- Data In/Data Out CE
- Chip Enable WE
- Write Enable OE
