Datasheet Details
| Part number | DS1270AB |
|---|---|
| Manufacturer | Maxim Integrated (now Analog Devices) |
| File Size | 191.18 KB |
| Description | 16M Nonvolatile SRAM |
| Datasheet |
 DS1270AB Datasheet
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General Description
A0
A20
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC GND
- Power (+5V) - Ground
NC - No Connect
DESCRIPTION
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words
Key Features
- 5 years minimum data retention in the absence of external power.
- Data is automatically protected during power loss.
- Unlimited write cycles.
- Low-power CMOS operation.
- Read and write access times of 70 ns.
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
- Full ±10% VCC operating range (DS1270Y).
- Optional ±5% VCC operating range (DS1270AB).
- Optional industrial temperature range of -40°C to.