DS1270AB Overview
Description
The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.
Key Features
- 5 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Unlimited write cycles
- Low-power CMOS operation
- Read and write access times of 70 ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Full ±10% VCC operating range (DS1270Y)
- Optional ±5% VCC operating range (DS1270AB)
- Optional industrial temperature range of
- Address Inputs DQ0 - DQ7
