Datasheet4U Logo Datasheet4U.com

DS1270W - 3.3V 16Mb Nonvolatile SRAM

Description

A0 A20 - Address Inputs DQ0 DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+3.3V) - Ground NC - No Connect DESCRIPTION The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 w

Features

  • Five years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Unlimited write cycles.
  • Low-power CMOS operation.
  • Read and write access times of 100ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Optional industrial (IND) temperature range of -40°C to +85°C PIN.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DS1275 Line-Powered RS-232 Transceiver Chip Dallas Semiconductor
DS1200 Serial RAM Dallas Semiconducotr
DS1200-3 AC-DC / Distributed Power Front-End 1U Emerson
DS1200-3-002 AC-DC / Distributed Power Front-End 1U Emerson
DS1200-3-005 AC-DC / Distributed Power Front-End 1U Emerson

Other Datasheets by Maxim Integrated (Analog Devices)

Part Number Description
DS1270AB 16M Nonvolatile SRAM
DS1270Y 16M Nonvolatile SRAM
DS1210 Nonvolatile Controller
DS1217M Nonvolatile Read/Write Cartridge
DS1218 Nonvolatile Controller

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
19-5614; Rev 11/10 www.maxim-ic.com DS1270W 3.
Published: |