DS28E80 Description
The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.
DS28E80 Key Features
- High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization
- Resistant Up to 75kGy (kiloGray) of Gamma Radiation
- Reprogrammable 248 Bytes of User Memory
- Lower Block Size Provides Greater Flexibility in Programming User Memory
- Memory is Organized as 8-Byte Blocks
- Each Block Can Be Written 8 Times
- User-Programmable Write Protection for Individual Memory Blocks
- Advanced 1-Wire Protocol Minimizes Interface to Just Single Contact
- pact Package and Single IO Interface Reduces Board Space and Enhances Reliability
- Unique Factory-Programmed, 64-Bit Identification Number