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Maxim Integrated Semiconductor Electronic Components Datasheet

DS28E80 Datasheet

Gamma Radiation Resistant 1-Wire Memory

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DS28E80
EVALUATION KIT AVAILABLE
Gamma Radiation Resistant 1-Wire Memory
General Description
The DS28E80 is a user-programmable nonvolatile mem-
ory chip. In contrast to the floating-gate storage cells,
the DS28E80 employs a storage cell technology that is
resistant to gamma radiation. The DS28E80 has 248
bytes of user memory that are organized in blocks of
8 bytes. Individual blocks can be write-protected. Each
memory block can be written 8 times. The DS28E80
communicates over the single-contact 1-Wire® bus at
standard speed or overdrive speed. Each device has its
own guaranteed unique 64-bit registration number that is
factory programmed into the chip. The communication fol-
lows the 1-Wire protocol with a 64-bit registration number
acting as node address in the case of a multiple-device
1-Wire network.
Applications
Identification of Medical Consumables
Identification and Calibration Medical Tools/Accessories
1-Wire is a registered trademark of Maxim Integrated Products, Inc.
Ordering Information appears at end of data sheet.
Features and Benefits
High Gamma Resistance Allows User-Programmable
Manufacturing or Calibration Data Before Medical
Sterilization
Resistant Up to 75kGy (kiloGray) of Gamma Radiation
Reprogrammable 248 Bytes of User Memory
Lower Block Size Provides Greater Flexibility in
Programming User Memory
Memory is Organized as 8-Byte Blocks
Each Block Can Be Written 8 Times
User-Programmable Write Protection for Individual
Memory Blocks
Advanced 1-Wire Protocol Minimizes Interface to
Just Single Contact
Compact Package and Single IO Interface Reduces
Board Space and Enhances Reliability
Unique Factory-Programmed, 64-Bit Identification
Number
Communicates at 1-Wire Standard Speed
(15.3kbps max) and Overdrive Speed (76kbps max)
Operating Range: 3.3V ±10%, -40°C to + 85°C
Reading, 0°C to +50°C Writing
±8kV HBM ESD Protection (typ) for IO Pin
6-Pin TDFN Package
Typical Application Circuit
VCC
VCC
PIOX
µC
PIOY
GND
10k
BSS84
RPUP
DS28E80
IO
GND
19-7120; Rev 0; 9/14


Maxim Integrated Semiconductor Electronic Components Datasheet

DS28E80 Datasheet

Gamma Radiation Resistant 1-Wire Memory

No Preview Available !

DS28E80
Gamma Radiation Resistant 1-Wire Memory
Absolute Maximum Ratings
IO Voltage Range to GND.....................................-0.5V to +4.0V
IO Sink Current.................................................................±20mA
Operating Temperature Range............................ -40°C to +85°C
Junction Temperature.......................................................+150°C
Storage Temperature Range............................. -55°C to +125°C
Lead Temperature (soldering, 10s).................................. +300°C
Soldering Temperature (reflow)
TDFN............................................................................ +260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics (Note 1)
TDFN
Junction-to-Ambient Thermal Resistance (θJA)...........60°C/W
Junction-to-Case Thermal Resistance (θJC)................11°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(TA = -40°C to +85°C, unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
IO PIN: GENERAL DATA
1-Wire Pullup Voltage
1-Wire Pullup Resistance
Input Capacitance
Input Load Current
High-to-Low Switching
Threshold
VPUP
RPUP
CIO
IL
VTL
(Note 3)
VPUP = 3.3V ±10% (Note 4)
(Notes 5, 6)
IO pin at VPUP
(Notes 6, 7, 8)
Input Low Voltage
Low-to-High Switching
Threshold
VIL (Notes 3, 9)
VTH (Notes 6, 7, 10)
Switching Hysteresis
Output Low Voltage
Recovery Time
Time Slot Duration
(Notes 3, 14)
VHY
VOL
tREC
tSLOT
(Notes 6, 7, 11)
IOL = 4mA (Note 12)
RPUP = 750Ω (Notes 3, 13)
Standard speed
Overdrive speed
IO PIN: 1-Wire RESET, PRESENCE DETECT CYCLE
Reset Low Time (Note 3)
tRSTL
Standard speed
Overdrive speed
Reset High Time (Note 15)
tRSTH
Standard speed
Overdrive speed
Presence Detect Sample Time
(Notes 3, 16)
tMSP
Standard speed
Overdrive speed
IO PIN: 1-Wire WRITE
Write-Zero Low Time
(Notes 3, 17)
tW0L
Standard speed
Overdrive speed
MIN TYP MAX UNITS
2.97
300
10
65
13
6.5
5
0.65 x
VPUP
0.75 x
VPUP
0.3
3.63
750
22
0.3
0.4
V
nF
µA
V
V
V
V
V
µs
µs
480 640
µs
48 80
480
µs
48
60 72
µs
8 10
60 120
µs
8 16
www.maximintegrated.com
Maxim Integrated │2


Part Number DS28E80
Description Gamma Radiation Resistant 1-Wire Memory
Maker Maxim Integrated
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DS28E80 Datasheet PDF






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