MT41J64M16LA-187E Overview
DDR3 SDRAM MT41J256M4 32 Meg x 4 x 8 Banks MT41J128M8 16 Meg x 8 x 8 Banks MT41J64M16 8 Meg x 16 x 8 Banks 1Gb: x4, x8, x16 DDR3.
MT41J64M16LA-187E Key Features
- VDD = VDDQ = +1.5V ±0.075V
- 1.5V center-terminated push/pull I/O
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- POSTED CAS ADDITIVE latency (AL): 0, CL
- CAS (WRITE) latency (CWL): 5, 6, 7, 8, based on tCK
- Fixed burst length (BL) of 8 and burst chop (BC) of 4
- Selectable BC4 or BL8 on-the-fly (OTF)