APT44GA60BD30C Key Features
- Fast switching with low EMI
- Very Low Eoff for maximum efficiency
- Ultra low Cres for improved noise immunity
- Low conduction loss
- Low gate charge
- Increased intrinsic gate resistance for low EMI
- RoHS pliant
- Part: APT44GA60BD30C
- Manufacturer: Micrel Semiconductor
- Size: 244.79 KB
Related Micrel Semiconductor Datasheets
| Part Number | Description |
|---|---|
| APT44GA60SD30C | High Speed PT IGBT |
APT44GA60BD30C Description
APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency pared to other IGBT technologies.