Download the APT44GA60SD30C datasheet PDF.
This datasheet also covers the APT44GA60BD30C variant, as both devices belong to the same high speed pt igbt family and are provided as variant models within a single manufacturer datasheet.
Note: The manufacturer provides a single datasheet file (APT44GA60BD30C_MicrelSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for APT44GA60SD30C (Reference)
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APT44GA60SD30C. For precise diagrams, tables, and layout, please refer to the original PDF.
APT44GA60BD30C www.DataSheet4U.com APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD...
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d Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting APT44GA60BD30C in low EMI, even when switching at high frequency.
APT44GA60SD30C Datasheet
