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APT44GA60BD30C - High Speed PT IGBT

Key Features

  • Fast switching with low EMI.
  • Very Low Eoff for maximum efficiency.
  • Ultra low Cres for improved noise immunity.
  • Low conduction loss.
  • Low gate charge.
  • Increased intrinsic gate resistance for low EMI.
  • RoHS compliant.

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Datasheet Details

Part number APT44GA60BD30C
Manufacturer Micrel Semiconductor
File Size 244.79 KB
Description High Speed PT IGBT
Datasheet download datasheet APT44GA60BD30C Datasheet

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Part Number Description
APT44GA60SD30C High Speed PT IGBT

Full PDF Text Transcription for APT44GA60BD30C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT44GA60BD30C. For precise diagrams, tables, and layout, please refer to the original PDF.

APT44GA60BD30C www.DataSheet4U.com APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD...

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d Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting APT44GA60BD30C in low EMI, even when switching at high frequency.