APT44GA60SD30C - High Speed PT IGBT

Micrel Semiconductor

Download the APT44GA60SD30C datasheet PDF. This datasheet also covers the APT44GA60BD30C variant, as both devices belong to the same high speed pt igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

Fast switching with low EMI.
Very Low Eoff for maximum efﬁciency.
Ultra low Cres for improved noise immunity.
Low conduction loss.
Low gate charge.
Increased intrinsic gate resistance for low EMI.
RoHS compliant.

📥 Download Datasheet

APT44GA60SD30C high speed pt igbt by Micrel Semiconductor - Datasheet Preview — Note: The manufacturer provides a single datasheet file (APT44GA60BD30C_MicrelSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	APT44GA60SD30C
Manufacturer	Micrel Semiconductor
File Size	244.79 KB
Description	High Speed PT IGBT
Datasheet	APT44GA60SD30C Datasheet

More Datasheets from Micrel Semiconductor

Part Number	Description
APT44GA60BD30C	High Speed PT IGBT

Full PDF Text Transcription for APT44GA60SD30C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT44GA60SD30C. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text

APT44GA60BD30C www.DataSheet4U.com APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efﬁciency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting APT44GA60BD30C in low EMI, even when switching at high frequency.