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Micro Commercial Components

BAT54 Datasheet Preview

BAT54 Datasheet

250mWatt/ 30Volt Schottky Barrier Diode

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MCC
  omponents
21201 Itasca Street Chatsworth

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BAT54
THRU
BAT54S
Features
Low Forward Voltage
Surface Mount device
Very small conduction losses
250mWatt, 30Volt
Schottky Barrier Diode
MCC
Catalog
Number
BAT54
BAT54A
BAT54C
BAT54S
Device
Marking
L4P
L42
L43
L44
Type
Single
Dual
Dual
Dual
Pin
Configuration
(See Page 3)
Figure 1
Figure 2
Figure 3
Figure 4
SOT-23
A
D
CB
Maximum Ratings
Continuos Reverse Voltage
Forward Current
VR 30V
IF 0.3A
Non-Repetitive Peak Forward Current t<1s IFSM
Total Power Dissipation @ TA = 25°C
PD
1.0mA
250mW
Storage Temperature Range
Tstg -55°C to 150°C
Junction Temperature
Tj 150°C
Soldering temperature during 10s
Tj 260°C
Electrical Characteristics @ 25 °C Unless Otherwise Specified
Ratings
Symbol
Max.
Notes
Forward Voltage at
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
Reverse Current
Reverse Breakdown
Voltage
VF
IR
V(BR)
240mV
320mV
400mV
500mV
900mV
2.0 uA
>30V
VR = 25V
Capacitance
Reverse Recovery
Time
Thermal Resistance,
Junction to Ambient
CJ 10pF Measured at
1.0MHz, VR=1.0V
trr 5nS IF=IR=10mA;
I(REC) = 1mA
RθJA
500K/W
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com




Micro Commercial Components

BAT54 Datasheet Preview

BAT54 Datasheet

250mWatt/ 30Volt Schottky Barrier Diode

No Preview Available !

BAT54 thru BAT54S
MCC
Fig.1 : Average forward power dissipation versus
average forward current.
PF(av)(W)
0.35
0.30
δ = 0.05
0.25
0.20
0.15
0.10
0.05
0.00
0.00 0.05
δ = 0.1 δ = 0.2
δ = 0.5
IF(av) (A)
0.10 0.15 0.20
δ=1
T
δ=tp/T
0.25
tp
0.30
Fig.2 : Average forward current versus ambient
temperature ( δ = 1).
IF(av)(A)
0.35
0.30
0.25
0.20
0.15
0.10
T
0.05
δ=tp/T
tp
Tamb(°C)
0.00
0 25 50 75 100 125 150
Fig.3 : Non repetitive surge peak forward current
versus overload duration (maximum values).
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm x 8mm x 0.5mm).
IM(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3 IM
0.2
0.1
0.0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
Ta=25°C
Ta=50°C
Ta=100°C
1E+0
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
δ = 0.2
0.10
δ = 0.1
0.01
1E-3
Single pulse
1E-2
tp(s)
1E-1 1E+0
T
δ=tp/T
1E+1
tp
1E+2
www.mccsemi.com


Part Number BAT54
Description 250mWatt/ 30Volt Schottky Barrier Diode
Maker Micro Commercial Components
Total Page 3 Pages
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