Micro Electronics 13007
NPN Transistor
FEATURES
:● High Voltage Capability
● High Speed Switching
● Wide SOA TO-220F 1 2 3 TO-220 1 2 3 3 2.APPLICATION: 1:B 2:C 3:E
● Fluorescent Lamp
● Electronic Ballast
● Switch mode power supply
● Eletronic Transformer 3.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃,unless otherwise specified) Parameter Symbol Value Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 8 A Collector Power Dissipation Pc 100 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~150 ℃ 4.ELECTRICAL CHARACTERISTICS
(Ta=25℃ Unless Otherwise Specified) Parameter Symbol Collector-Base Breakdown Voltage BVCBO Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage Collector-Base Cutoff Current BVEBO ICBO Collector-Emitter Cutoff Current ICEO Emitter-Base Cutoff Current Collector-Emitter Saturation IEBO VCEsat Test Condition Ic=1mA IE=0 Ic=10mA IB=0 IE=1mA Ic=0 VcB=680V IE=0 VCE=390V IB=0 VEB=9V Ic=0 Ic=2A IB=0.4A Min Max 700 400...