DN1509 - Vertical DMOS FET

Description

This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process.

Features

High-input impedance.
Low-input capacitance.
Fast switching speeds.
Low on-resistance.
Free from secondary breakdown.
Low input and output leakages.

Microchip

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Datasheet Details

Part number	DN1509
Manufacturer	Microchip
File Size	360.48 KB
Description	Vertical DMOS FET
Datasheet	DN1509 Datasheet
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Full PDF Text Transcription

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DN1509 N-Channel, Depletion-Mode, Vertical DMOS FET Features • High-input impedance • Low-input capacitance • Fast switching speeds • Low on-resistance • Free from secondary breakdown • Low input and output leakages Applications • Normally-on switches • Battery operated systems • Converters • Linear amplifiers • Constant current sources • Telecom Description This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.

Published: Sep 26, 2016 |