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DN1509 - Vertical DMOS FET

General Description

This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process.

Key Features

  • High-input impedance.
  • Low-input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakages.

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DN1509 N-Channel, Depletion-Mode, Vertical DMOS FET Features • High-input impedance • Low-input capacitance • Fast switching speeds • Low on-resistance • Free from secondary breakdown • Low input and output leakages Applications • Normally-on switches • Battery operated systems • Converters • Linear amplifiers • Constant current sources • Telecom Description This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.