DMOS Datasheet | Specifications & PDF Download

Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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TDA7294 Datasheet 100 V, 100 W DMOS audio amplifier with mute/st-by MULTIPOWER BCD TECHNOLOGY Multiwatt15V Multiwatt15H Maturity status link TDA72

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A4988 DMOS Microstepping Driver with Translator and Overcurrent Protection FEATURES AND BENEFITS ▪ Low Rds(on) outputs ▪ Automatic current decay mode

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TDA7296 Datasheet 70 V-60 W DMOS audio amplifier with mute/ST-BY Multiwatt 15 Product status link TDA7296 Features • Multipower BCD technology • Ver

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TDA7293 120-volt, 100-watt, DMOS audio amplifier with mute and standby Features „ Multipower BCD technology „ Very high operating voltage range (±50

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INTEGRATED CIRCUITS DATA SHEET TDA8359J Full bridge vertical deflection output circuit in LVDMOS Product specification Supersedes data of 13 March 20

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® TDA7294S 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±45V) DMOS POWER STAGE HIGH OUTPUT POWER (100W @ THD

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CS630F CS630F VDMOS 1. CS630F VDMOS ，、。： ● ● ● 10.4max ● ● ：TO-220F 15.5max 4.8max 2.7max 2. 2.1 ，Tamb= 25℃ （） Ta=25℃ Tc=25℃

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INTEGRATED CIRCUITS DATA SHEET TDA8357J Full bridge vertical deflection output circuit in LVDMOS Preliminary specification File under Integrated Circ

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DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Prelimin

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® TDA7295 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±40V) DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 80W MUSI

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TN2640 N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switch

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM2N60 * ： ： * ： ◆ ◆ ◆100% N VDMOS ◆ 、 , *

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t

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polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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CS6N60(F) CS6N60(F) VDMOS 1. CS6N60(F) N 600V VDMOS ， 、 。 ： ● ● ● ● ： CS6N60 CS6N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 1.35Ω ID 6A 2.

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PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

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polyfet rf devices LC801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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