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2N7000

N-Channel DMOS FET

2N7000 Features

* Free from Secondary Breakdown

* Low Power Drive Requirement

* Ease of Paralleling

* Low CISS and Fast Switching Speeds

* Excellent Thermal Stability

* Integral Source-Drain Diode

* High Input Impedance and High Gain Applications

* Mot

2N7000 General Description

The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temper.

2N7000 Datasheet (751.33 KB)

Preview of 2N7000 PDF

Datasheet Details

Part number:

2N7000

Manufacturer:

Microchip ↗

File Size:

751.33 KB

Description:

N-channel dmos fet.

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2N7000 N-Channel DMOS FET Microchip

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