2N7000 Datasheet - Microchip

N-Channel DMOS FET

2N7000 Features

* Free from Secondary Breakdown

* Low Power Drive Requirement

* Ease of Paralleling

* Low CISS and Fast Switching Speeds

* Excellent Thermal Stability

* Integral Source-Drain Diode

* High Input Impedance and High Gain Applications

* Mot

2N7000 General Description

The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temper.

2N7000 Datasheet (751.33 KB)