2N7000 - N-Channel DMOS FET

Description

The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process.

Features

Free from Secondary Breakdown.
Low Power Drive Requirement.
Ease of Paralleling.
Low CISS and Fast Switching Speeds.
Excellent Thermal Stability.
Integral Source-Drain Diode.
High Input Impedance and High Gain.

Microchip

📥 Download Datasheet

Datasheet Details

Part number	2N7000
Manufacturer	Microchip
File Size	751.33 KB
Description	N-Channel DMOS FET
Datasheet	2N7000 Datasheet
Additional preview pages of the 2N7000 datasheet.

📁 Similar Datasheet

2N7000 - TMOS FET Transistor (Motorola Inc)
2N7000 - N-channel MOSFET (NXP)
2N7000 - N-Channel MOSFET (NTE)
2N7000 - N-Channel MOSFET (INCHANGE)
2N7000 - N-Channel 60V MOSFET (Vishay)
2N7000 - N-Channel MOSFET (ST Microelectronics)
2N7000 - N-Channel MOSFET (ON Semiconductor)
2N7000 - N-Channel MOSFET (UTC)
2N7000 - N-Channel Transistor (Fairchild Semiconductor)
2N7000 - Small Signal MOSFET (SEMTECH)

Other Datasheets by Microchip

2N7002 - N-channel MOSFET
2N7008 - N-Channel Vertical DMOS FET

Full PDF Text Transcription

Click to expand full text

2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.) General Description The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process.

Published: Dec 2, 2021 |